It consists of three terminals known as the emitter, base, and collector and comes in a to92 package. Pricing and availability on millions of electronic components from digikey electronics. Free devices maximum ratings rating symbol value unit collector. Pdf 2n5550 2n5551 2n5551 226aa r14525 2n5550d 2n5551 circuit 2n5550 2n5551 2n555 1n914. Vceo160v high current gain applications telephone switching circuit amplifier ordering information ordering number pin assignment package packing lead free plating. H utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values such as. Base voltage 2n5550 2n5551 vcbo 160 180 vdc emitter. Pdf 2n5550 2n5551 2n5551 226aa resistanc218a msc1621t1 msc2404 msd1819a mv1620 transistor equivalent 2n5551 2n5551 equivalent transistor 2n5551.
Pdf 2n5550 2n5551 2n5400 2n5401 2n5550 2n5551 transistor equivalent 2n5551 st 2n5551 of 2n5550 2n5551 to92 st 25 a hz15. P c max625mw absolute maximum ratings t a 25 c refer to 2n5551 for graphs electrical characteristics t a 25 c pulse test. Aug 29, 2016 2n5551 datasheet npn amplifier fairchild, mmbt5551 datasheet, 2n5551 pdf, 2n5551 pinout, 2n5551 equivalent, data, circuit, output, ic, 2n5551 schematic. Baseemitter on voltage vs collector current figure 5.
Smallsignal transistors, fets and diodes device data 259 2n5550 2n5551. Switching and amplification in high voltage applications such as telephony. C page 2 of 2 any changes of specification will not. The 2n5551 is an npn amplifier transistor with an amplification factor of 80 when the collector current is 10ma. The 2n5551 is an npn amplifier transistor with an amplification factor hfe of 80 when the collector current is 10ma. However nj semiconductors assumes no responsibility for any errors or omissions. It also has decent switching characteristics transition frequency is 100mhz hence can amplify lowlevel signals. Vbrceo 2n5550 2n5551 vbrcbo 2n5550 2n5551 vbrebo icbo 2n5550 2n5551 2n5550 2n5551, adc nadc motorola smallsignal transistors, fets and diodes device data 259 2n5550 2n5551. Controls the biasing of transistor, used to turn on or off the transistor.
Motorola smallsignal transistors, fets and diodes device data. Buy 25 pcs of 2n5550 transistor npn 140 volts 600 ma. As complementary types the pnp transistors st 2n5400 and st 2n5401 are recommended. Elektronische bauelemente ss8050 npn silicon general purpose transistor 26oct2009 rev. Collectoremitter saturation voltage vs collector current figure 3. Baseemitter saturation voltage vs collector current figure 4. Emitter voltage 2n5550 2n5551 vceo 140 160 vdc collector.
Fairchild npn general purpose amplifier,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. W semiconductor components industries, llc, 2004 june, 2004 rev. Vceo160v high current gain applications telephone switching circuit amplifier ordering information ordering number pin assignment package packing lead free plating halogen free 1 2 3 2n5551lx. Ic cross reference cross reference ci stk cross reference ci tda cross reference ci sharp cross reference hitachi audio ic cross reference and circuit applications smd cross reference and equivalent we make every effort to ensure that the material on this site is accurate, however we do not warrant or represent that the information is free from errors or omission. Typical pulsed current gain vs collector current figure 2. Nte194, 2n5833, 2n5088, 2n3055, 2n5401 pnp same family transistors. Unit dc current gain at v ce 5 v, i c 1 ma at v ce 5 v, i c 10 ma at v ce 5 v, i. Details about mmbt5551 g1 smd transistor sot23 2n5551 mmbt5551 sot23 50pcs. The 2n5550 and 2n5551 is a silicon npn amplifier transistor packaged in a standard to92 case. Semtech npn silicon expitaxial planar transistor for general purpose, high voltage amplifier applications,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors.
H utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values such as maximum ratings, operating condition ranges, or. It also has decent switching characteristics transition frequency is 100mhz hence can amplify. Maximum ratings are those values beyond which device damage can occur. Free packages are available maximum ratings rating symbol value unit collector.
Mmbt5551 g1 smd transistor sot23 2n5551 mmbt5551 sot23 50pcs. Toshiba transistor silicon npn epitaxial type pct process. Onsemi, alldatasheet, datasheet, datasheet search site for electronic. This device is designed for general purpose high voltage amplifiers and gas discharge display drivers vceo vcbo vebo ic tj, tstg collectorbase voltage emitterbase voltage collector current continuous collectoremitter voltage. Offer 2n5550 ph from kynix semiconductor hong kong limited.
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